Properties of Silicon Nitride Deposited by RF-PECVD for C-Si solar cell
نویسندگان
چکیده
منابع مشابه
Emitter Passivation Properties of PECVD Silicon Nitride on Silicon Solar Cells
As industrially produced solar cells become thinner and more efficient, silicon nitride (SiN) films are becoming increasingly important. At present, the favored means of producing these films is by remote plasma-enhanced chemical vapour deposition (RPECVD). In this paper, using films produced by an industrial Roth & Rau SiNA RPECVD reactor, we investigate the surface passivation qualities of Si...
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ژورنال
عنوان ژورنال: Journal of the Korean Solar Energy Society
سال: 2013
ISSN: 1598-6411
DOI: 10.7836/kses.2013.33.2.011